Plasma Assisted Chemical Vapor Deposition of Aluminum Thin Films for ULSI Metallization

Plasma assisted chemical vapor deposition(PACVD) of aluminum has been studied for the planarized metallization of ULSI. According to PACVD, plugging of the submicron contact holes followed by planarized interconnection was possible by the blanket deposition. As the RF plasma power increased, the step coverage became less conformal. PACVD aluminum obtained at low RF plasma power showed much smoother surface topology than LPCVD(low pressure chemical vapor deposition) aluminum.