New Drain Current Transient Technique for Measuring the Slow Oxide Trap Density in MOS Transistors

A new technique, based on the drain current transient measurements after pulsing a MOS transistor from accumulation to inversion, is proposed for the assessment of the slow oxide trap density. A simple model allowing the extraction of the volume oxide trap concentration is derived. It is found that the experimentally obtained trap densities for virgin and stressed devices fall in good agreement with those extracted by the charge pumping method, emphasizing the consistency of the technique.