Numerical Simulation of Transient Emission from Deep Level Traps in Polysilicon Thin Film Transistors

Numerical simulation has been used to model transient carrier emission from deep level traps in polycrystalline silicon (poly-Si) thin film transistors, and to validate the analytical approximations used to interpret DLTS measurements. The analytical analysis has been shown to yield substantially correct values for a typical double exponential poly-Si trap state density as a function of energy, to within +/-10%. The major source of discrepancy has been associated with the omission of the effects of displacement current from the analytical analysis.