DocumentCode :
513806
Title :
Mechanical Stress in and Surrounding CoSi2 and TiSi2 Lines
Author :
De Wolf, Ingrid ; Howard, David J. ; Maex, Karen ; Maes, Herman E.
Author_Institution :
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
fYear :
1996
fDate :
9-11 Sept. 1996
Firstpage :
609
Lastpage :
612
Abstract :
In this paper, the local mechanical stress near arrays of silicide lines with different thicknesses, widths, and pitches is studied using micro-Raman spectroscopy. Different silicides are compared: CoSi, CoSi2, CoSi2 formed with Ti cap, CoSi2 formed with Ti interlayer, C49 TiSi2 and C54 TiSi2. The local phase of the latter two samples was also determined by Raman spectroscopy.
Keywords :
Compressive stress; Diodes; Frequency; Mechanical variables measurement; Raman scattering; Silicidation; Spectroscopy; Stress measurement; Substrates; Tensile stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
Print_ISBN :
286332196X
Type :
conf
Filename :
5436133
Link To Document :
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