• DocumentCode
    513808
  • Title

    Elevated Base Single - Poly Self - Aligned BJTs for Deep Submicron BiCMOS

  • Author

    Gravier, T. ; Maury, D. ; Kirtsch, I- ; Delpech, P. ; Pantel, R. ; Regolini, J.L. ; Chantre, A.

  • Author_Institution
    France Telecom, CNET Grenoble, BP 98, F-38243 Meylan Cedex, France
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    605
  • Lastpage
    608
  • Abstract
    This paper reports the fabrication of single-polysilicon self-aligned transistors using a 200mm 0.35¿m CMOS-derived bipolar process. An improved Ti salicidation process has been developed to minimize narrow emitter effects. Good device characteristics are demonstrated for 0.35¿m wide emitter devices, showing that this transistor structure can be extended to sub-0.5¿m BiCMOS.
  • Keywords
    BiCMOS integrated circuits; CMOS technology; Dry etching; Electron emission; Fabrication; Implants; Morphology; Spontaneous emission; Telecommunications; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436136
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513808