Title :
Elevated Base Single - Poly Self - Aligned BJTs for Deep Submicron BiCMOS
Author :
Gravier, T. ; Maury, D. ; Kirtsch, I- ; Delpech, P. ; Pantel, R. ; Regolini, J.L. ; Chantre, A.
Author_Institution :
France Telecom, CNET Grenoble, BP 98, F-38243 Meylan Cedex, France
Abstract :
This paper reports the fabrication of single-polysilicon self-aligned transistors using a 200mm 0.35¿m CMOS-derived bipolar process. An improved Ti salicidation process has been developed to minimize narrow emitter effects. Good device characteristics are demonstrated for 0.35¿m wide emitter devices, showing that this transistor structure can be extended to sub-0.5¿m BiCMOS.
Keywords :
BiCMOS integrated circuits; CMOS technology; Dry etching; Electron emission; Fabrication; Implants; Morphology; Spontaneous emission; Telecommunications; Transistors;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
