• DocumentCode
    513823
  • Title

    Optimization and Comparison of Losses in Si and 4H SiC 1kV Trench MOSFETs

  • Author

    Bakowski, M. ; Gustafsson, U

  • Author_Institution
    Industrial Microelectronics Center, P. O. Box 1084, S-164 21 Kista, Sweden
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    583
  • Lastpage
    586
  • Abstract
    In this paper the performance of the 1kV 4H SiC trench gate UMOS type MOSFET is investigated with respect to the optimization of the total device losses. The total losses in 1kV Si and 4H SiC MOSFETs are calculated as a function of frequency in the case of a DC-AC PWM converter. The superiority of the SiC MOSFET is demonstrated also taking into account the very poor state of the art channel mobility of 15 cm2/Vs.
  • Keywords
    Design optimization; Diodes; Doping; Frequency conversion; MOSFETs; Performance loss; Pulse width modulation converters; Silicon carbide; Switching loss; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436160
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513823