• DocumentCode
    513836
  • Title

    A Charge based MOSFET Model for Low-Voltage Mixed-Signal Applications

  • Author

    Schrom, G. ; Stach, A. ; Selberherr, S.

  • Author_Institution
    Institute for Microelectronics, TU Vienna, Gusshausstrasse 27-29, A-1040 Vienna, Austria. E-mail schrom@iue.tuwien.ac.at
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    495
  • Lastpage
    498
  • Abstract
    Recent developments towards lower voltages [1, 2, 3, 4] pose increasingly stringent demands on compact device model accuracy. We present a new approach to dynamic MOSFET modeling which is especially suited for the simulation of low-voltage mixed analog digital circuits. The model is based on terminal charges and conductive currents which are determined from transient current/voltage data. These data sets can be easily obtained through measurement or simulation of the devices. Using a physically motivated interpolation method the model supplies the accurate current/charge data and their derivatives for given terminal voltages.
  • Keywords
    Application software; Capacitance; Circuit simulation; Computational modeling; Current measurement; Electronic mail; Interpolation; MOSFET circuits; Microelectronics; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436180