Title :
A New Non-Quasi-Static SOI MOSFET Model Dedicated to Analog Circuit Simulation
Author :
Robilliart, Etienne ; Dubois, Emmanuel
Author_Institution :
IEMN/ISEN UMR CNRS 9929, Avenue Poincaré, Cité Scientifique, BP 69, 59652 Villeneuve d´´Ascq Cedex, France Tel: (+33) 20.19.79.17 Fax: (+33) 20.19.78.84 e-mail: ero@isen.fr
Abstract :
A new Non-Quasi-Static (NQS) model of SOI-MOSFETs is presented in this paper. This model, based on the charge sheet approach, is valid for all regions of operation. Excellent agreement is found with 2D device simulations both under static and fast transient conditions. This new model proves to be useful to simulate analog circuits where NQS phenomena have a first order effect on circuit performance.
Keywords :
Analog circuits; Capacitance; Circuit optimization; Circuit simulation; Electronic mail; MOSFET circuits; Poisson equations; Silicon on insulator technology; Strips; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
