Title :
Two-Dimensional Analytical Modelling of Subthreshold Region in Fully-Depleted SOI MOSFETs
Author :
Pidin, S. ; Koyanagi, M.
Author_Institution :
Department of Machine Intelligence and System Engineering, Faculty of Engineering, Tohoku University, Aramaki, Aoba-ku, Sendai 980-77, Japan
Abstract :
New two-dimensional analytical models for the potential distribution and the subthreshold factor in SOI MOSFET are developed and extensive study of 0.1 ¿m SOI MOSFET design is performed. It is shown that the ultra-thin SOI films and high doping concentrations are necessary to obtain high subthreshold slopes in SOI MOSFETs.
Keywords :
Analytical models; Design engineering; Doping; MOS devices; MOSFETs; Machine intelligence; Performance analysis; Semiconductor films; Silicon; Systems engineering and theory;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
