• DocumentCode
    513842
  • Title

    High-Frequency SiGe HBT´s with Implanted Emitters

  • Author

    Nanver, L.K. ; Goudena, E.J.G. ; Visser, C. ; van Zeijl, H.W. ; Slotboom, J.W.

  • Author_Institution
    DIMES IC Process Research Sector, Delft University of Technology, P.O.box 5053, 2600 GB Delft, The Netherlands
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    469
  • Lastpage
    472
  • Abstract
    A method is presented by which the implantation damage induced transient enhanced diffusion of boron and phosphorus is used to fabricate high-frequency SiGe HBT´s with implanted emitters. A device with 30 nm basewidth and fT = 44 GHz is demonstrated.
  • Keywords
    Boron; Doping; Epitaxial growth; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Performance gain; Power dissipation; Production; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436189
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513842