Title :
Increased Current Gain and Reduced Emitter Resistance in Sige HBTs by Fluorine Or Chlorine Implantation into a Polysilicon Emitter Contact
Author :
Schiz, J. ; Moiseiwitsch, N.E. ; Marsh, C.D. ; Ashburn, P. ; Booker, G.R.
Author_Institution :
Department of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, UK.
Abstract :
This paper shows that fluorine implantation can be used to reduce the emitter resistance in a polysilicon emitter contact using a thermal budget that is compatible with SiGe technology. The influence of fluorine and chlorine on the base current is also investigated and it is shown that suppression by a factor of ~7 can be obtained in some circumstances.
Keywords :
Annealing; Area measurement; Contact resistance; Electrical resistance measurement; Germanium silicon alloys; Implants; Silicon germanium; Surface resistance; Temperature; Thermal resistance;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
