• DocumentCode
    513846
  • Title

    Measurement of the Electron Ionization Coefficient Temperature Dependence in InGaAs-based Heterojunction Bipolar Transistors

  • Author

    Meneghesso, Gaudenzio ; Neviani, Andrea ; Parisotto, R. ; Vendrame, L. ; Hafizi, Muhd ; Stanchina, William E. ; Canali, C. ; Zanoni, E.

  • Author_Institution
    DEI, UniversitÃ\xa0 di Padova, Via Gradenigo 6A, I-35131 Padova, Italy
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    447
  • Lastpage
    450
  • Abstract
    In this paper the temperature dependence of the electron ionization coefficient ¿n at low electric fields in In0.53Ga0.47As is determined by means of multiplication factor M-1 measurements in AlInAs/In0.53Ga0.47As/InP Heterojunction Bipolar Transistors. As opposed to the behavior found in most other semiconductors, our measurements show that ¿n, increases with increasing temperature. This can be a critical effect in power devices, where a positive feedback between power dissipation and impact ionization multiplication may set up.
  • Keywords
    Electric variables measurement; Electrons; Heterojunction bipolar transistors; Impact ionization; Indium gallium arsenide; Indium phosphide; Irrigation; Laboratories; Power dissipation; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436193
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513846