Optimization of Poly-Emitter Technologies in a BiCMOS Environment using Advanced Physical Modeling

In this paper we identify the critical steps of poly-emitter bipolar technology integration into an existing baseline CMOS process. Both process flow and device characteristics were prototyped using an integrated TCAD environment. In particular, base engineering turned out to be crucial. For the simulation of the process, it was necessary to take advantage of advanced point defect assisted diffusion models. The results draw a general picture of the effect of low temperature deposition processes on dopant redistribution, and possible consequences for device characteristics.