DocumentCode
513848
Title
Bias Stress Stability of C-doped AlGaAs/GaAs HBTs
Author
Sheng, H. ; Cattani, L. ; Amin, F. ; Rezazadeh, A.A. ; Fantini, F. ; Wake, D. ; Bland, S.
Author_Institution
Centre for Optics and Electonics, Department of Electronics & Electrical Engineering, King´´s College London, Strand, London. UK
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
439
Lastpage
442
Abstract
The bias-stress reliability of MOCVD grown C-doped AlGaAs/GaAs HBTs were studied. We found that B/E heterojunction is very stable in agreement with the literature. However, current gain degradation was found to be device dependent. Further more, we found that the B/C metallurgical degrades with stress, leading to device failure.
Keywords
Degradation; Educational institutions; Gallium arsenide; Gold; Heterojunction bipolar transistors; MOCVD; Space charge; Stability; Stress measurement; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5436200
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