A Transient Activation Model for Phosphorus After Sub-Amorphizing Channeling Implants

We present a diffusion model for the activation of phosphorus after a sub-amorphizing channeling implant into bare silicon under intrinsic conditions. A coupled diffusion model has been developed to take into account the basic impurity diffusion mechanisms as well as point-defect generation-recombination mechanisms occuring during thermal treatment of doped silicon. The role of the vacancy based Frank-Turnbull recombination was investigated for the activation process.