• DocumentCode
    513856
  • Title

    Recent advances and future trends of ULSI technologies

  • Author

    Iwai, Hiroshi

  • Author_Institution
    Microelectronics Laboratory, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 210, Japan
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    45
  • Lastpage
    52
  • Abstract
    In recent few years, significant progress has been seen in the study of 0.1 and sub-0.1 micron gate length MOSFETs. In this paper, recent advance in the small-geometry MOSFETs is described and the limit of MOSFET downsizing is predicted. Then, a concept of future ULSI in 2010´s is discussed.
  • Keywords
    Humans; Large scale integration; Leakage current; MOSFETs; Random access memory; Silicon; Space charge; Switches; Threshold voltage; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436213
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513856