Title :
Recent advances and future trends of ULSI technologies
Author_Institution :
Microelectronics Laboratory, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 210, Japan
Abstract :
In recent few years, significant progress has been seen in the study of 0.1 and sub-0.1 micron gate length MOSFETs. In this paper, recent advance in the small-geometry MOSFETs is described and the limit of MOSFET downsizing is predicted. Then, a concept of future ULSI in 2010´s is discussed.
Keywords :
Humans; Large scale integration; Leakage current; MOSFETs; Random access memory; Silicon; Space charge; Switches; Threshold voltage; Ultra large scale integration;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
