Title :
A 30 GHz fT Quasi Self-Aligned Single Poly Emitter Bipolar Technology
Author :
de Pontcharra, J. ; Behouche, E. ; Ailloud, L. ; Thomas, D. ; Gravier, T. ; Chantre, Alain
Author_Institution :
CEA-LETI, 17 av. des Martyrs, 38054 Grenoble Cedex 9, France.
Abstract :
Single polysilicon NPN transistors with quasi-self aligned structure fabricated in a low complexity 0.5 ¿m-BiCMOS technology demonstrate ideal static characteristics and good frequency performances. The obtained 30 GHz maximum fT and 4.2 V breakdown voltage are comparable to the best reported results for single poly self-aligned transistors.
Keywords :
Boron; CMOS process; Etching; Frequency; Geometry; Implants; Microelectronics; Protection; Silicon carbide; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
