DocumentCode :
513884
Title :
Physical Models for 2D Numerical Simulation of New Titanium Salicide Processes
Author :
Fornara, P. ; Touret, O. ; Poncet, A.
Author_Institution :
France Telecom, CNET, BP 98, 38243 Meylan Cedex, France
fYear :
1996
fDate :
9-11 Sept. 1996
Firstpage :
145
Lastpage :
148
Abstract :
Contact silicidation over very shallow junctions and narrow Si-poly lines is one of the most critical issues for ultra large scale integration (ULSI) circuit applications. The aim of this paper is to present a physically based unified model for titanium silicide processes which is valid for both techniques silicide growth by solid state phase (SSP) reaction and silicide chemical vapor deposition (CVD) with control of substrate consumption. After the description of the model, 2D numerical simulation results are presented.
Keywords :
Chemical vapor deposition; Numerical models; Numerical simulation; Semiconductor device modeling; Silicidation; Silicides; Solid modeling; Solid state circuits; Titanium; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
Print_ISBN :
286332196X
Type :
conf
Filename :
5436244
Link To Document :
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