Physical Models for 2D Numerical Simulation of New Titanium Salicide Processes

Contact silicidation over very shallow junctions and narrow Si-poly lines is one of the most critical issues for ultra large scale integration (ULSI) circuit applications. The aim of this paper is to present a physically based unified model for titanium silicide processes which is valid for both techniques silicide growth by solid state phase (SSP) reaction and silicide chemical vapor deposition (CVD) with control of substrate consumption. After the description of the model, 2D numerical simulation results are presented.