Title :
A 4.2 K CMOS-Compatible Wide-Spectrum Detector
Author :
Gutiérrez-D, Edmundo A. ; Koshevaya, S.V. ; Deen, M.J.
Author_Institution :
National Institute for Astrophysics, Optics and Electronics INAOE, P.O. Box 51 & 216, Z.P. 72000, Puebla, MEXICO; School of Eng. Sc., Simon Fraser University, Burnaby, B.C., V5A 1S6, CANADA.
Abstract :
Experiments are described in which free electrons in the frozen n-well in a CMOS process, cooled down to 4.2 K, are generated by photo-ionisation of phosphorous donors. A semiconductor laser diode of wavelength ¿= 0.768 ¿m and output optical power Po of 3 mW is used to excite electrons from their frozen state to the conduction band. Under illumination, the photo-generation of electrons causes the current of the n-well resistor to increase from its dark value Idark¿1 pA up to about 2 ¿A, giving a Ilight/Idark ratio of 2×106. This phosphorous-well implanted resistor is proposed as a 0.768 ¿m wavelength optical detector at 4.2 K.
Keywords :
CMOS process; CMOS technology; Diode lasers; Electron optics; Insulation; Ionization; Optical detectors; Photodetectors; Resistors; Silicon;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
