Optimization of DMOS Cell Structures with a Self-Aligned Source Contact for Smart Power Applications by Realistic Numerical Device Simulation

For the efficient application of a self-aligned source contact concept the optimization of a DMOSFET cell with respect to the specific on-resistance and voltage blocking capability has been carried out by numerical device simulations. It is shown that, in order to get appropriate predictions of the device characteristics, it is essential to consider rotational symmetry. Especially for small contact sizes, realistic contacts and doping profiles resulting from three-dimensional calculations have been taken into account.