Title :
Physical Modeling of the Transit Time in Bipolar Transistors
Author_Institution :
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, 8000 Munich 83, FRG
Abstract :
A new physical modeling of the forward transit time ¿f in bipolar transistors for a large range of collector-current densities jC at various base-collector voltages VBC is presented. The validity of this model is confirmed by measurements on fast self-aligned silicon bipolar transistors and by device simulations.
Keywords :
Bipolar transistors; Circuit simulation; Circuit synthesis; Equations; Frequency measurement; Microelectronics; Power system modeling; Silicon; Time measurement; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
