Nonstationary Electron Transport in Realistic Submicron BP-SAINT GaAs MESFETs Evaluated by Ensemble Monte Carlo Simulation

The nonstationary electron transport in the realistic nonuniformly-doped BPSAINT GaAs MESFETs with 0.1 to 0.53¿m gate-lengths has been studied under the various conditions using an ensemble Monte Carlo simulator. It is found that the effective saturation velocity depends on the gate-length, but also on the drain voltage, the gate voltage, and the doping density. The some assumptions used in the relaxation time approximation are discussed.