Title :
Monte Carlo studies on hole mobility in heavily doped n-type Silicon
Author :
Pan, Y. ; Kleefstra, M.
Author_Institution :
Delft University of Technology, Department of Electrical Engineering, Electrical Materials Laboratory, P.O. Box 5031, DELFT, the Netherlands.
Abstract :
The minority hole mobility in heavily doped n-type silicon is calculated by means of the Monte Carlo technique from 77K to 350K. Hole-electron scattering and hole-plasmon scattering are included in the simulation. The calculated mobility, based on the Born approximation with the third-body exclusion, is close to the recently measured mobility. The temperature dependence of the calculated mobility is in approximate agreement with the measurements.
Keywords :
Acoustic scattering; Approximation methods; Impurities; Monte Carlo methods; Optical scattering; Particle scattering; Phonons; Silicon; Tail; Temperature dependence;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
