• DocumentCode
    513895
  • Title

    Integrated Si/CoSi2/Si-Heterotransistors at High Current Densities

  • Author

    Uffmann, D. ; Adamski, C.

  • Author_Institution
    Institut fÿr Halbleitertechnologie and Laboratorium fÿr Informationstechnologie, Universitÿt Hannover, Appelstr. 11a, D-3000 Hannover, Germany
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    35
  • Lastpage
    38
  • Abstract
    We have fabricated integrated Si/CoSi2/Si-heterotransistors by MBE. The commonbase current gain of the devices is correlated to pinhole size and density. The electrical behaviour is investigated up to an emitter current density of 6000A/cm2. A decrease of current gain at high current densities is observed for devices with higher pinhole density. For devices with lower pinhole density, space charge effects will lead to an increase of emitter-to-collector delay time at high current densities.
  • Keywords
    Contacts; Current density; Cutoff frequency; Microelectronics; Molecular beam epitaxial growth; Parasitic capacitance; Silicon; Temperature; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5436256
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513895