Simulation and Experimental Results of Al Doping by Ion Beam Mixing Technique for Deep Low Doped Junction Formation

This paper presents a method for Aluminum inclusion into silicon based on ion mixing. Argon ions are implanted through a Al layer deposited on a silicon substrate. Several experiments consisting in implantation + annealing have been carried out in order to obtain low doped and deep P-N juntions. Besides, since this process has to be optimized, a implantation simulator based on the MonteCarlo method have been developed and coupled with SUPREM-3 simulations for diffusion process study. Results show that it is possible to obtain deep junction with reduced thermal budjet. Doses over 3e15cm^-2 can not be used since undesirable effects occur when annealing the impurities.