DocumentCode
513909
Title
A fully modular 1 μm CMOS technology incorporating EEPROM, EPROM and interpoly capacitors
Author
Cacharelis, Philip J ; Hart, Michael J ; Wolstenholme, Graham R ; Carpenter, Roger D ; Johnson, Ian F ; Manley, Martin H
Author_Institution
National Semiconductor Corporation, Santa Clara, CA, 95052-8090, USA.
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
547
Lastpage
550
Abstract
This paper will describe a modular technology which uses a novel integration scheme to include double poly EEPROM, single poly EPROM and an interpoly capacitor. The single poly EPROM [1] has been adopted to simplify the integration issues; the three modules (EEPROM, EPROM and A/D) can be combined in any combination without affecting their electrical performance.
Keywords
CMOS process; CMOS technology; Capacitors; EPROM; Etching; Implants; Integrated circuit technology; Low voltage; Nonvolatile memory; Oxidation;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436296
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