Title :
Field isolation and active devices for 16 Mbit DRAMs
Author :
Mühlhoff, H. -M ; Dietl, J ; Küpper, P. ; Lemme, R.
Author_Institution :
Siemens AG, Semiconductor Division, Otto-Hahn-Ring 6, Mÿnchen, West Germany
Abstract :
Results are presented showing that conventional LOCOS Isolation can be used for memory cells with pitches less than 1.5¿m. Careful tuning of LOCOS overetch and channel stop implantation as well as optimization of the cell transistor yield satisfactory isolation of 0.7¿m LOCOS and half-micron active devices with active area widths of 0.25¿m.
Keywords :
Doping profiles; Implants; MOS devices; Oxidation; Publishing; Random access memory; Substrates; Temperature; Thickness measurement; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
