Title :
A high-energy ion implanted BICMOS process with compatible EPROM structures
Author :
Wijburg, R.C.M. ; Hemink, G.J. ; Middelhoek, J. ; Wallinga, H
Author_Institution :
University of Twente, subdepartment IC-technology and Electronics, P.O. box 217, 7500AE Enschede (NL)
Abstract :
A 1.5¿m high-energy ion implanted BiCMOS process is proposed. This process offers NMOS, PMOS, vertical npn transistors and VIPMOS-EPROM devices. The process structure is modular in order to achieve CMOS and bipolar transistors in uncompromised forms. Consequently, the N-well and collector regions are defined separately. Conflicting requirements for the collector doping profile have been optimized towards practical electrical device characteristics.
Keywords :
BiCMOS integrated circuits; Bipolar transistors; Boron; CMOS process; Doping profiles; EPROM; Epitaxial growth; Ion implantation; MOS devices; Reproducibility of results;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
