DocumentCode
513915
Title
A high-energy ion implanted BICMOS process with compatible EPROM structures
Author
Wijburg, R.C.M. ; Hemink, G.J. ; Middelhoek, J. ; Wallinga, H
Author_Institution
University of Twente, subdepartment IC-technology and Electronics, P.O. box 217, 7500AE Enschede (NL)
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
515
Lastpage
518
Abstract
A 1.5¿m high-energy ion implanted BiCMOS process is proposed. This process offers NMOS, PMOS, vertical npn transistors and VIPMOS-EPROM devices. The process structure is modular in order to achieve CMOS and bipolar transistors in uncompromised forms. Consequently, the N-well and collector regions are defined separately. Conflicting requirements for the collector doping profile have been optimized towards practical electrical device characteristics.
Keywords
BiCMOS integrated circuits; Bipolar transistors; Boron; CMOS process; Doping profiles; EPROM; Epitaxial growth; Ion implantation; MOS devices; Reproducibility of results;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436304
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