A high performance VLSI structure-SOI/SDB complementary buried channel MOS (CBCMOS) IC

A Complementary Buried Channel MOS(CBCMOS) integrated circuit has been fabricated on a SOI(Silicon On Insulator) substrate prepared by SDB(Silicon wafer Direct Bonding) technology. CBCMOS is a ``fully depteted buried channel´´ MOSFET which is different from conventional ``surface buried channel´´ MOS device in which a pn junction exists at channel surface, Moreover, pn junction is totally eliminated in CBCMOS device structure. Simulation and experimental results have demonstrated that small geometry effects, breakdown vottage, speed etc. have been significantly improved. Kink effect has been totally eliminated. Futhermore, the fabrication process is fully compatible with conventional CMOS/SOI technology.