Title :
The hysteresis behaviour of silicon p-n diodes at liquid helium temperature
Author :
Dierickx, B. ; Simoen, E. ; Deferm, L. ; Claeys, Cor
Author_Institution :
MEC, Kapeldreef 75, B-3030 Leuven, Belgium.
Abstract :
The turn-on behaviour of a Si p-n junction at 4.2 K is dominated by the small injection barrier existing at the ``ohmic´´ contact. The hysteresis typically observed is explained by the build-up of space charge in the lowly doped (frozen out) parts of the junction.
Keywords :
Charge carrier processes; Helium; Hysteresis; P-n junctions; Photonic band gap; Semiconductor diodes; Silicon; Space charge; Temperature; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
