Title :
On the modelling of mobility in silicon MOS transistors
Author :
Emrani, Amin ; Ghibaudo, G. ; Balestra, F.
Author_Institution :
Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, ENSERG, 23 rue des martyrs, B.P. 257 38016 Grenoble, France.
Abstract :
An original method for the extraction of the depletion charge mobility dependency coefficient ¿ based on the combined exploitation of the body and gate transconductance MOSFET characteristics is presented. This method enables to show that ¿ is not a constant but is a parameter strongly dependent on channel length and on device type (P or N).
Keywords :
Capacitance; Digital video broadcasting; MOSFET circuits; Permittivity; Semiconductor device doping; Semiconductor device testing; Silicon; Sun; Threshold voltage; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
