• DocumentCode
    513920
  • Title

    On the modelling of mobility in silicon MOS transistors

  • Author

    Emrani, Amin ; Ghibaudo, G. ; Balestra, F.

  • Author_Institution
    Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, ENSERG, 23 rue des martyrs, B.P. 257 38016 Grenoble, France.
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    497
  • Lastpage
    500
  • Abstract
    An original method for the extraction of the depletion charge mobility dependency coefficient ¿ based on the combined exploitation of the body and gate transconductance MOSFET characteristics is presented. This method enables to show that ¿ is not a constant but is a parameter strongly dependent on channel length and on device type (P or N).
  • Keywords
    Capacitance; Digital video broadcasting; MOSFET circuits; Permittivity; Semiconductor device doping; Semiconductor device testing; Silicon; Sun; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436309
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513920