Improvement of output impedance in SOI MOSFETs

A common gate dual MOSFET structure is proposed to improve the output impedance of SOI MOS transistors. The device consists of two transistors in series with a common gate but operates as a single device. Kink effect can be confined to the upper transistor while the overall output characteristics of the dual device are dominated by the lower transistor. As a consequence, the kink effect can be effectvely suppressed in the overall output characterstics. Furthermore, the output breakdown characteristics and the saturaton drain output imapednce are also much improved.