Title :
Intrinsic gate capacitances of SOI MOSFETs: measurement, modelling, floating substrate effects
Author :
Flandre, D. ; van de Wiele, F. ; Jespers, P.G.A. ; Haond, M.
Author_Institution :
Laboratoire de Microélectronique, Université Catholique de Louvain, Place du Levant 3, 1348 Louvain-la-Neuve, Belgium.
Abstract :
Measurements of intrinsic gate capacitances of SOI MOSFETs are described and are shown to provide valuable information for characterizaton purposes as well as to cast some light on dynamic floating substrate effects. An accurate charge-based analytical model valid in linear operation is also presented.
Keywords :
Analytical models; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; MOSFET circuits; Nonlinear equations; Performance evaluation; Predictive models; Substrates; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
