Title :
MBE HEMT-compatible diode lasers
Author :
Ebner, J. ; Lary, J.E. ; Elíason, G.W. ; Plant, T.K.
Author_Institution :
Electrical and Computer Engineering Department, Oregon State University
Abstract :
Preliminary results are presented on the fabrication of a new HEMT-compatible diode laser structure using MBE growth with plane-selective doping. Light emission from the 2-D electron/hole gas junction has been detected and characterized.
Keywords :
Charge carrier processes; Crystalline materials; Diode lasers; Doping; Etching; Gallium arsenide; HEMTs; Molecular beam epitaxial growth; Optical device fabrication; Optical pulses;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
