Si Permeable Based Transistor Realization Using a MOS Compatible Technology

We have fabricated silicon permeable base transistors (PBT) using a MOS technology process. The critical lithography defining the metal base grating is a standard optical lithography, which allows submicronic periodicity of the base grating, and therefore permits the realisation of PBT with either normnally on or normally off transistor characteristics. Thanks to the high current density achievable in these devices and the high degree of compatibitlity with MOS technologies, PBT clearly appears as a possible alternative for bipolar metal oxide semiconductor (BICMOS) applications.