• DocumentCode
    513945
  • Title

    An Investigation into the Effects of RTA Processing on Low Frequency Noise and Other Characteristics of CMOS FETs

  • Author

    Murray, D.C. ; Carter, J.C. ; Evans, A.G.R. ; Gougam, A. ; Altrip, J.L

  • Author_Institution
    Dept. of Electronics and Computer Science, The University, Southampton, SO9 5NH, England.
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    557
  • Lastpage
    560
  • Abstract
    CMOS devices fabricated with a rapid thermal anneal source and drain activation have been compared with similar devices fabricated with a standard furnace anneal. Measurements have been made of low frequency noise, average interface state density, channel mobility, threshold voltage and bulk states using DLTS. Results show that in some instances RTA can have a deleterious effect on device performance that appears to be due to the rapid rates of cooling that can occur when using this techology.
  • Keywords
    CMOS process; Density measurement; FETs; Frequency measurement; Furnaces; Interface states; Low-frequency noise; Noise measurement; Rapid thermal annealing; Rapid thermal processing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436545
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513945