Title :
MOMBE Growth of GaInAs/InP Structures: Quantum Wells anid Selective Epitaxy
Author :
Gailhanou, M. ; Goldstein, L. ; Lambert, Mathieu ; Boulou, M. ; Starck, C. ; Le Gouezigou, L.
Author_Institution :
Laboratoires de Marcoussis, CR-CGE, Route de Nozay 91460 Marcoussis (France)
Abstract :
High quality InP and GaInAs have been grown by MOMBE. 77K mobilities of 57000cm2/Vs for InP and 50000cm2/Vs for GaInAs were obtained. We have prepared GaInAs/InP multi single quantum well structure showing sharp photoluminescence peaks with linewidths as low as 7 meV for 1.7nm well. We have also studied selective epitaxy on different shapes of mesas and performed the planarization of a RIE etched ridge.
Keywords :
Dielectric devices; Dielectric substrates; Dry etching; Epitaxial growth; Hydrogen; Indium phosphide; Molecular beam epitaxial growth; Photoluminescence; Shape measurement; Wet etching;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
