Title :
Influence of Intrinsic Gettering on Silicon Recombination Properties and their Relation to Device Performance
Author :
Kittler, Martin ; Richter, Hans ; Seifert, Winfried
Author_Institution :
Academy of Sciences of the GDR, Institute of Semiconductor Physics, W.-Korsing-Str. 2, DSR-1200 Frankfurt (Oder)
Keywords :
Electrons; Gettering; Probes; Radiative recombination; Silicon; Spontaneous emission; Tin;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
