DocumentCode
513961
Title
1.2 μm BICMOS Technology for Mixed Analog-digital Applications
Author
Mallardeau, C. ; Keen, P. ; Monroy, A. ; Marin, J.C. ; Celi, D. ; Brunel, P.A. ; Roche, M.
Author_Institution
SGS-THOMSON MICROELECTRONICS, B.P. 217,38019 GRENOBLE Ced. FRANCE
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
461
Lastpage
464
Abstract
A 1.2μm mixed analog-digital BICMOS technology has been developed and characterized. The objective of this technology is to achieve simultaneously high density CMOS logic (5V) and high performance bipolar transistors for analog applications (12V). In this paper we particulary discuss the results of the optimization of the bipolar device parameters, in order to combine high voltage analog requirements and high frequency performance.
Keywords
Analog-digital conversion; BiCMOS integrated circuits; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS logic circuits; CMOS process; CMOS technology; Contact resistance; Cutoff frequency; Marine technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436571
Link To Document