DocumentCode :
513967
Title :
Physical Modelling of Bipolar Mode Field Effect Transistor (BMFET) for Circuit Simulation
Author :
Busatto, G. ; Vitale, G.F.
Author_Institution :
IRECE-CNR, Naples, Italy
fYear :
1989
fDate :
11-14 Sept. 1989
Firstpage :
427
Lastpage :
430
Abstract :
A charge-control model of the BMFET, based on a physical analysis of its operation is presented and discussed. This model is used to derive an equivalent circuit of BMFET capable of describing, with continuity, both bipolar and unipolar regions of its characteristics. The equivalent circuit is presented in a form suitable to be easily incorporated in a circuit simulator such as SPICE.
Keywords :
Circuit simulation; Conductivity; Doping; Equations; Equivalent circuits; FETs; Physics; SPICE; Semiconductor process modeling; Steady-state;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
Print_ISBN :
0387510001
Type :
conf
Filename :
5436579
Link To Document :
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