A New Methodology to Build-up Accurate Empirical Models for VLSI MOSFETs

A procedure to derive a conmplete set of piecewise continuous orthogonal functions able to represent wide ranges of experimental data for VLSI MOSFETs by using simple analytical device models, is presented. Based on this procedure and starting from zero-order models, a new methodology to build-up accurate empirical models which are continuous functions of all bias voltages and parameters is proposed. As an example, an advanced HCMOS process is considered.