Title :
Compact Modelling of the MOSFET Drain Conductance
Author :
Klaassen, F.M. ; Velghe, R.M.D.
Author_Institution :
Philips Research Laboratories, P.O. Box 80000, 5600 JA Eindhoven, The Netherlands
Abstract :
A new compact MOSFET model for analog design applications is presented. In particular results for the drain conductance are discussed in detail. A comparison between measured and modelled data for a wide variety of CMOS devices shows an excellent agreement.
Keywords :
Analytical models; Charge measurement; Current measurement; Feedback; Gain measurement; Laboratories; Length measurement; MOSFET circuits; Semiconductor device modeling; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
