• DocumentCode
    513975
  • Title

    High-sensitivity, Polysilicon-emitter Phototransistors

  • Author

    Nam, N.S. ; Zólomy, I. ; Berkecz, J. ; Pásztor, Gy

  • Author_Institution
    Technical University of Budapest, Department of Electron Devices H-1521
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    389
  • Lastpage
    392
  • Abstract
    Phototransistors were prepared and investigated with polysilicon emitter. The high current gain (till 104) ensured a very high light sensitivity as compared to normal phototransistors. The spectral sensitivity was also more favorable. Transistors with an interfacial tunnel oxide layer show a much better performance than the transistors without it. Also higher current amplifications were obtained in the case of ≪100≫ oriented substrate.
  • Keywords
    Doping; Electrical resistance measurement; Electron devices; Fabrication; Grain size; Ion implantation; Microelectronics; Phototransistors; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436587
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513975