DocumentCode :
513975
Title :
High-sensitivity, Polysilicon-emitter Phototransistors
Author :
Nam, N.S. ; Zólomy, I. ; Berkecz, J. ; Pásztor, Gy
Author_Institution :
Technical University of Budapest, Department of Electron Devices H-1521
fYear :
1989
fDate :
11-14 Sept. 1989
Firstpage :
389
Lastpage :
392
Abstract :
Phototransistors were prepared and investigated with polysilicon emitter. The high current gain (till 104) ensured a very high light sensitivity as compared to normal phototransistors. The spectral sensitivity was also more favorable. Transistors with an interfacial tunnel oxide layer show a much better performance than the transistors without it. Also higher current amplifications were obtained in the case of ≪100≫ oriented substrate.
Keywords :
Doping; Electrical resistance measurement; Electron devices; Fabrication; Grain size; Ion implantation; Microelectronics; Phototransistors; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
Print_ISBN :
0387510001
Type :
conf
Filename :
5436587
Link To Document :
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