DocumentCode :
513976
Title :
InP Based Integrated Laser Driver Circuit
Author :
Paraskevopoulos, A. ; Bach, H.-G. ; Mekonnen, G. ; Schroeter-JanBen, H. ; Fiedler, F. ; Grote, N.
Author_Institution :
Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, Einsteinufer 37, D-1000 Berlin (FRG)
fYear :
1989
fDate :
11-14 Sept. 1989
Firstpage :
385
Lastpage :
388
Abstract :
An integrated laser driver circuit representing a step towards a monolithic optical transmitter was fabricated on InGaAsP/InP employing invertible double-heterojunction bipolar transistors. Static transconductance of up to 200 mS was attained. Well-behaved eye pattern diagrams have been demonstrated at modulation rates of as high as 1.12 Gbit/s.
Keywords :
Bipolar transistors; Circuit testing; Coupling circuits; DH-HEMTs; Diode lasers; Driver circuits; Indium phosphide; Optical transmitters; Transconductance; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
Print_ISBN :
0387510001
Type :
conf
Filename :
5436588
Link To Document :
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