Title :
Electrical Properties of Ultra Thin Multilayer Dielectrics on Polysilicon
Author :
Hirschler, J. ; Thanh, L.Do ; Küsters, K.H. ; Sichart, K.v.
Author_Institution :
Siemens AG, Dept. HL T 111, 8000 Mÿnchen 83, Otto-Hahn-Ring 6, West Germanny
Abstract :
We demonstrate the feasibility of very thin ONO (SiO2/Si3N4/SiO2) dielectrics on poly-Si for 16M DRAM application. For Dox eff. = 8.5nm, the leakage current density is lower than 10-8A/cm2, and the long term stability is more than 10 years at electric fields of 5.5MV/cm. The onset of tunneling current in ONO dielectrics depends on the thickness of the SiO2 entry potential barrier. The high field current characteristic depends on the thickness of the SiO2 exit potential barrier.
Keywords :
Current density; Current measurement; Density measurement; Dielectric measurements; Nonhomogeneous media; Random access memory; Semiconductor films; Stress measurement; Thickness measurement; Time measurement;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
