Self-consistent Modelling of npn and pnp Transistors

This paper examines recently published physical models for carrier transport, which distinguish between minority and majority carrier mobilties. The models have been implemented in a bipolar device simulator and comparisons have been made between predicted and measured results for both npn and pnp tansistors. Discrepancies between measured and simulated device currents are discussed and further experiments to isolate sources of disagreement are outlined.