Quantification of Diffusion Mechanisms of Boron, Phosphorus, Arsenic, and Antimony in Silicon

This paper quantifies the Si-interstitial (I) and Si-vacancy (V) components of diffusion for B, P, As and Sb in silicon at 1100°C. It is determined that B and P diffuse predominantly by an I type mechanism and Sb predominantly by a V type mechanism. As displays an equal tendency to diffuse by I and V mechanisms. In the extrinsic diffusion regime the dopants maintain the same relative I and V components.