DocumentCode :
513993
Title :
Trench Isolation Schemes for Bipolar Devices --- Benefits and Limiting Aspects
Author :
Goto, Hiroshi ; Inayoshi, Katsuyuki
Author_Institution :
Bipolar Process Division, Fujitsu Limited, 1015, Kamikodanaka, Nakahara, Kawasaki, 211, Japan
fYear :
1987
fDate :
14-17 Sept. 1987
Firstpage :
369
Lastpage :
372
Abstract :
This paper gives a review of benefits and limiting aspects in trench isolation techniques for bipolar deviices. The most sophisticated trench isolation techniques have realized not only higher packing densities but reduced collector-substrate, wiring-substrate and base-collector parasitic capacitances. By using these techniques, high performance bipolar devices have been fabricated while crystal defects caused by trench structures are the serious problem. Trench isolaltion techniques are still in progress, and it seems now that there is no apparent limiting aspect until the trench width reaches the filler material width to sustain enough breakdown voltage.
Keywords :
Acoustic scattering; Boltzmann equation; Distribution functions; Electrons; Hydrodynamics; Lattices; Light scattering; Optical scattering; Particle scattering; Semiconductor device reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
Print_ISBN :
0444704779
Type :
conf
Filename :
5436610
Link To Document :
بازگشت