Title :
0.25 μm All Level e-Beam Pseudomorplhic AlGaAs/InGaAs MODFET with ft over 65 GHz
Author :
Lopez, L. ; Marten, A. ; Forchel, A. ; Caceres, J.L. ; Nickel, H. ; Schlapp, W. ; Losch, R. ; Briggmann, Dieter
Author_Institution :
IV. Phys. Inst, Univ. Stuttgart, FRG.; E.T.S.I.T., Univ. polyt. Madrid, Spain
Abstract :
This contribution describes the fabrication of 0.25 μm gatelength MODFETs onl pseudomorphic Al0.2Ga0.8As/In0.2Ga0.8 As material. An e-beam writer was employed in all lithographic levels. We have obtained a DC extrinsic transcoductance gm≫4400≫ mS/mm. From mirowave measurement and the nodeled equivalent circuit ft ft and Fmax values of over 65 GHz and 110 GHz are obtained.
Keywords :
Density measurement; Electron mobility; Etching; Gallium arsenide; HEMTs; Indium gallium arsenide; Length measurement; MODFETs; Nominations and elections; Strain measurement;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
