Title :
A Resonant Tunneling High Electron Mobility Transistor
Author :
Van Hove, Marleen ; Van Hoof, Chris ; De Raedt, W. ; Jansen, P. ; Dobbelacre, I. ; Peeters, J. ; Borghs, G. ; Van Rossum, M.
Author_Institution :
IMEC vzw Kapeldreef 75, B-3030 Leuven, Belgium
Abstract :
A double barrier resonant tunneling heterostructure has been combined with a pseudomorphic high electron mobility transistor. This three terminal device shows negative transconductance in addition to a clear negative differential resistance region which shifts with gate voltage. The device characteristics can be adequately explained by a simple device simulation model. Flip-flop and frequency doubling operations at room temperature are demonstrated.
Keywords :
Electron mobility; Flip-flops; Frequency; HEMTs; MODFETs; PHEMTs; Resonant tunneling devices; Temperature; Transconductance; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
